DocumentCode
2657227
Title
A 12 Ghz 140k Low Noise GaAs FET Amplifier
Author
Fujiki, Y. ; Fukuda, S. ; Haga, I. ; Ohata, K.
fYear
1980
fDate
28-30 May 1980
Firstpage
370
Lastpage
372
Abstract
A low noise GaAs FET amplifier provided with the noise temperature of less than 140K (NF: 1.71 dB) at -50/spl degree/C over 1 I .7 - 12.2 GHz band was developed using GaAs FET´s with a recess structure and MIC technology.
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/MWSYM.1980.1124290
Filename
1124290
Link To Document