Title :
Dielectric Spectroscopy of GaSe thin film and bulk single crystal
Author_Institution :
Dept. of Comput. Sci. & Eng., Bahria Univ., Karachi
Abstract :
The Dielectric Spectroscopy (DS) of GaSe thin films and p-type epsiv-GaSe single crystal have been reported in the frequency range 10 -2 Hz to 10 4 Hz and temperature range 300 to 480 K. The measured samples of thin films and single crystal have shown low frequency dispersion (LFD).
Keywords :
III-VI semiconductors; gallium compounds; permittivity; semiconductor thin films; GaSe; bulk single crystal; dielectric spectroscopy; frequency 0.10 Hz to 100000 Hz; low frequency dispersion; p-type epsiv-GaSe single crystal; temperature 300 K to 480 K; thin film; Conductivity; Dielectric measurements; Dielectric thin films; Dispersion; Electrochemical impedance spectroscopy; Frequency measurement; Gases; III-V semiconductor materials; Temperature distribution; Transistors; component; dielectric behaviour; gallium selenide;
Conference_Titel :
Multitopic Conference, 2008. INMIC 2008. IEEE International
Conference_Location :
Karachi
Print_ISBN :
978-1-4244-2823-6
Electronic_ISBN :
978-1-4244-2824-3
DOI :
10.1109/INMIC.2008.4777712
