DocumentCode :
2657307
Title :
An Osciplier Up to K-Band Using Dual-Gate GaAs MESFET
Author :
Chu, A.S. ; Chen, P.T.
fYear :
1980
fDate :
28-30 May 1980
Firstpage :
383
Lastpage :
386
Abstract :
The feasibility of using a dual-gate GaAs MESFET with Mo-Au gates as a Ku or K-band osciplier has been demonstrated. Two test oscipliers were measured, one osciplier in Ku-band delivered 16.3 dBm at 12 GHz, while the other in K-band offered 9.0 dBm output power at 18.2 GHz and 3.8 dBm at 22 GHz.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location :
Washington, DC, USA
Type :
conf
DOI :
10.1109/MWSYM.1980.1124294
Filename :
1124294
Link To Document :
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