Experimental extraction of point defects parameters needed for 2-D process modeling using reverse modeling

Author

Shauly, Eitan N. ; Ghez, Richard ; Komem, Yigal

Author_Institution

Tower Semicond. Ltd., Migdal Ha´´Emek, Israel

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

362

Lastpage

364

Abstract

This work deals with the simulation of two-dimensional impurity diffusion in CMOS silicon devices. The reverse modeling method was used to determine the diffusion coefficient (D_I), surface recombination rate of defects (K_I) and the characteristics of the injecting source. Analysis showed similarity between D_I in the 2D system compared with the value obtained from non-patterned samples. The results for D_I and K_I are very well described by the Arrhenius expressions. D_I was found to be related to the substrate type e.g. EPI or CZ. The values of K_I related to the interface type, oxidizing or nonoxidizing (SiO₂ or Si₃N₄).

Keywords

CMOS integrated circuits; doping profiles; impurity distribution; integrated circuit measurement; integrated circuit modelling; interface structure; point defects; semiconductor device models; 2D impurity diffusion; 2D process modeling; Arrhenius expressions; CMOS silicon devices; CZ substrate type; EPI substrate type; Si₃N₄; Si₃N₄ interface; SiO₂; SiO₂ interface; defect surface recombination rate; diffusion coefficient; injecting source characteristics; nonoxidizing interface type; oxidizing interface type; point defects parameters; reverse modeling; simulation; Atomic layer deposition; Atomic measurements; CMOS process; Computational modeling; Electric variables measurement; Oxidation; Predictive models; Radiative recombination; Semiconductor device modeling; Silicon devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2004. ICECS 2004. Proceedings of the 2004 11th IEEE International Conference on

Print_ISBN

0-7803-8715-5

Type

conf

DOI

10.1109/ICECS.2004.1399693

Filename

1399693