Title :
Photodetector with uniform response in 620 nm to 870 nm range
Author :
Shendye, A. ; Pillai, A. ; Shtein, S. Mil
Author_Institution :
Univ. Massachussettes, Lowell
Abstract :
In this study, p-n junction, which consists of a p-type region of In0.4Ga0.6P 5 mum thick layer doped to the level of NA= 1014 cm-3 is developed. The n-type region is doped to the level of ND= 1012 cm-3 and consists of modulation doped layers ranging from In0.4Ga0.6P to In0.9Ga0.1P. And photodetector with an approximately uniform response in the near-infrared spectrum between 620 nm to 870 nm is designed.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; infrared detectors; p-n junctions; photodetectors; semiconductor doping; In0.4Ga0.6P; modulation doped layers; near-infrared spectrum; p-n junction; photodetector design; wavelength 620 nm to 870 nm; Biomedical equipment; Conducting materials; Educational institutions; Electromagnetic wave absorption; Infrared detectors; Medical services; Paper technology; Photoconductivity; Photodetectors; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422292
