• DocumentCode
    2657366
  • Title

    Photodetector with uniform response in 620 nm to 870 nm range

  • Author

    Shendye, A. ; Pillai, A. ; Shtein, S. Mil

  • Author_Institution
    Univ. Massachussettes, Lowell
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this study, p-n junction, which consists of a p-type region of In0.4Ga0.6P 5 mum thick layer doped to the level of NA= 1014 cm-3 is developed. The n-type region is doped to the level of ND= 1012 cm-3 and consists of modulation doped layers ranging from In0.4Ga0.6P to In0.9Ga0.1P. And photodetector with an approximately uniform response in the near-infrared spectrum between 620 nm to 870 nm is designed.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; infrared detectors; p-n junctions; photodetectors; semiconductor doping; In0.4Ga0.6P; modulation doped layers; near-infrared spectrum; p-n junction; photodetector design; wavelength 620 nm to 870 nm; Biomedical equipment; Conducting materials; Educational institutions; Electromagnetic wave absorption; Infrared detectors; Medical services; Paper technology; Photoconductivity; Photodetectors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422292
  • Filename
    4422292
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2657366