Title :
A compact model for fully overlapped LDD FD SOI MOSFETs
Author :
Zhang, Guohe ; Shao, Zhibiao ; Zhou, Kai
Author_Institution :
Xi ´´an Jiaotong Univ., Jiaotong
Abstract :
The goal of this paper is to propose a simple and efficient physics-based threshold voltage model for short-channel FD SOI MOSFETs with fully-overlapped LDD structures. The model which is based on the solution of the two-dimensional (2D) Poisson´s equation in the thin SOI as well as the gate and buried oxides, has considered the voltage drop in the LDD region by introducing empirical parameters, and has merits of the bulk LDD counterpart.
Keywords :
MOSFET; Poisson equation; semiconductor device models; silicon-on-insulator; 2D Poisson equation; buried oxide; fully overlapped LDD FD SOI MOSFET; fully-overlapped LDD structures; gate oxide; physics-based threshold voltage model; short-channel MOSFET; Boundary conditions; Capacitance; Circuit optimization; Educational institutions; Hot carriers; MOSFETs; Poisson equations; Semiconductor films; Silicon on insulator technology; Threshold voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422297
