Title :
Estimating performance of high output power density 400/400V isolated DC/DC converter with hybrid pair SJ-MOSFET and SiC-SBD for power supply of data center
Author :
Simanjorang, R. ; Yamaguchi, H. ; Ohashi, H. ; Takeda, T. ; Murai, Hitoshi ; Yamasaki, M.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., AIST, Japan
Abstract :
In this paper, the performance of high output power density 400/400 V isolated dc/dc converter for power supply in data center is investigated. The isolated dc/dc converter uses the hybrid pair of SJ-MOSFET and SiC-SBD power devices. A high accuracy of dc/dc converter analysis is carried out by considering the intrinsic and extrinsic loss parameter of power devices and circuit board. Based on this analysis, the efficiency and power density of isolated DC/DC converter is estimated for various high switching frequencies (100 kHz, 200 kHz and 300 kHz). From the result of the analysis operation of switching frequency by 200 kHz results in the highest output power density among the various high switching frequencies. The analysis estimates that the isolated dc/dc converter with efficiency around 97% and power density 10 W/cm3 has strong possibility to be realized by the proposed design.
Keywords :
DC-DC power convertors; Schottky diodes; computer centres; computer power supplies; power MOSFET; silicon compounds; wide band gap semiconductors; SJ- MOSFET; SiC-SBD; circuit board; data center power supply; extrinsic loss parameter; frequency 100 kHz; frequency 200 kHz; frequency 300 kHz; high output power density; intrinsic loss parameter; isolated DC/DC converter; power devices; switching frequency; voltage 400 V; DC-DC power converters; Energy conservation; Isolation technology; Power generation; Power supplies; Resonance; Switching converters; Switching frequency; Topology; Voltage;
Conference_Titel :
Telecommunications Energy Conference, 2009. INTELEC 2009. 31st International
Conference_Location :
Incheon
Print_ISBN :
978-1-4244-2490-0
Electronic_ISBN :
978-1-4244-2491-7
DOI :
10.1109/INTLEC.2009.5351810
