DocumentCode :
2657712
Title :
Functionalized organic semiconductor-based field-effect transistors for phosphonate vapor detection
Author :
Huang, Jia ; Miragliotta, Joseph ; Becknell, Alan ; Katz, Howard E.
Author_Institution :
Johns Hopkins Univ., Baltimore
fYear :
2007
fDate :
12-14 Dec. 2007
Firstpage :
1
Lastpage :
2
Abstract :
In this talk, we report initial studies of p-type oligomer OFETs, with hydroxyl and phenol functionalized semiconductor blends serving as receptor layers, responding to the weakly basic analyte dimethyl methylphosphonate (DMMP) that simulates phosphonate nerve agents. The hydroxyl group is the simplest receptor that could be utilized for enhancing this interaction. At least one blend appears to be single-phase based on x-ray diffraction and electron microscopy.
Keywords :
X-ray diffraction; chemical analysis; chemical hazards; chemical variables measurement; electron microscopy; field effect transistors; gas sensors; organic semiconductors; polymer blends; X-ray diffraction; chemical warfare agents; dimethyl methylphosphonate; electron microscopy; functionalized organic semiconductor-based field-effect transistors; hydroxyl functionalized semiconductor blends; p-type oligomer OFET; phenol functionalized semiconductor blends; phosphonate nerve agents; phosphonate vapor detection; Chemical elements; Chemical sensors; Chemical transducers; Educational institutions; FETs; Gas detectors; Materials science and technology; OFETs; Physics; Sensor arrays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
Type :
conf
DOI :
10.1109/ISDRS.2007.4422312
Filename :
4422312
Link To Document :
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