Title :
Temperature dependant characteristics of scaled NMOS transistors with ultra-thin high-K dielectrics and metal gate electrodes
Author :
Zhang, Yanli ; Liyanage, Luckshitha S. ; Wang, Gan ; Jin, Zhian ; White, Marvin H.
Author_Institution :
Lehigh Univ., Sherman
Abstract :
This paper discusses the temperature dependence of the threshold voltage, electron mobility and gate leakage current for the scaled NMOS transistor, which has an interfacial SiO2 layer of 0.5 nm and an ALD (atomic layer deposition) fabricated HfO2 dielectric layer of 2.0 nm with a 10 nm TiN metal gate electrode covered by polysilicon.
Keywords :
MOSFET; atomic layer deposition; electron mobility; hafnium compounds; high-k dielectric thin films; leakage currents; silicon compounds; titanium compounds; ALD fabrication; SiO2-HfO2; TiN; atomic layer deposition; electron mobility; gate leakage current; interfacial layer; metal gate electrodes; scaled NMOS transistors; size 0.5 nm; size 10 nm; size 2 nm; temperature dependant characteristics; threshold voltage; ultra thin high-K dielectrics; Atomic layer deposition; Electrodes; Electron mobility; Hafnium oxide; High-K gate dielectrics; Leakage current; MOSFETs; Temperature dependence; Threshold voltage; Tin;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422318
