Title :
The effects of plasma treatment on the thermal stability of HfAlOx thin films
Author :
Chang, Kow-Ming ; Chen, Bwo-Ning ; Huang, Shih-Ming
Author_Institution :
Nat. Chiao-Tung Univ., Hsinchu
Abstract :
This paper discusses about, the plasma nitridation process could be used to passivate HfAlOx thin films and improve the thermal stability of HfAlOx thin films to sustain in 900 for at least 30 sec.
Keywords :
aluminium compounds; dielectric thin films; hafnium compounds; nitridation; passivation; plasma materials processing; thermal stability; HfAlOx; hafnium-based dielectrics thin films; passivation; plasma nitridation process; plasma treatment; thermal stability; Annealing; Capacitance-voltage characteristics; Dielectric thin films; Plasma density; Plasma properties; Plasma stability; Plasma temperature; Sputtering; Thermal stability; Transistors;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422320
