• DocumentCode
    2657875
  • Title

    The effects of plasma treatment on the thermal stability of HfAlOx thin films

  • Author

    Chang, Kow-Ming ; Chen, Bwo-Ning ; Huang, Shih-Ming

  • Author_Institution
    Nat. Chiao-Tung Univ., Hsinchu
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper discusses about, the plasma nitridation process could be used to passivate HfAlOx thin films and improve the thermal stability of HfAlOx thin films to sustain in 900 for at least 30 sec.
  • Keywords
    aluminium compounds; dielectric thin films; hafnium compounds; nitridation; passivation; plasma materials processing; thermal stability; HfAlOx; hafnium-based dielectrics thin films; passivation; plasma nitridation process; plasma treatment; thermal stability; Annealing; Capacitance-voltage characteristics; Dielectric thin films; Plasma density; Plasma properties; Plasma stability; Plasma temperature; Sputtering; Thermal stability; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422320
  • Filename
    4422320
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2657875