DocumentCode
2657948
Title
A Comprehensive Characterization of FET Power Amplifier Modules
Author
Wong, C. ; Bender, J.
fYear
1980
fDate
28-30 May 1980
Firstpage
493
Lastpage
495
Abstract
This paper reports on an investigation of the pertinent parameters of X-band GaAs FET power amplifier modules operating in both CW and pulse mode. Power compression, efficiency, AM/PM, bias sensitivities, output VSWR, AM and FM noise, IMD, harmonics, temperature, pulsewidth, duty cycle, intrapulse and interpulse data are presented.
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/MWSYM.1980.1124331
Filename
1124331
Link To Document