Title :
Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS
Author :
Yongxun Liu ; Hayashida, Tetsuro ; Matsukawa, Takashi ; Endo, Kazuhiko ; Masahara, Meishoku ; O´uchi, Shin-ichi ; Sakamoto, Kunihoro ; Ishii, Kenichi ; Tsukada, Junichi ; Ishikawa, Yuki ; Yamauchi, Hiromi ; Ogura, Atsushi ; Suzuki, Eiichi
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Abstract :
As one of promising metal gate materials, PVD TiN has widely been studied for conventional bulk-planar CMOS devices due to its high purity [1, 2]. However, there have been no systematical studies regarding the PVD TiN gate work function (tin) control using the nitrogen gas flow ratio (Rfrac12 = N2/(Ar+N2)) in the sputtering. In this paper, we present the Rfrac12 controlled tunable work function PVD TiN gate technology and its application for FinFET CMOS.
Keywords :
CMOS integrated circuits; MOSFET; nitrogen; sputtering; titanium compounds; FinFET CMOS; PVD; TiN; metal gate technology; nitrogen gas flow ratio; sputtering; Atherosclerosis; CMOS technology; Degradation; FinFETs; Fluid flow; MOSFETs; Materials science and technology; Nitrogen; Tin; Wet etching;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422324
