• DocumentCode
    2657981
  • Title

    STI Mechanical-stress induced subthreshold kink effect of 40nm PD SOI NMOS device

  • Author

    Lin, Ision ; Su, Vincen ; Kuo, James B. ; Ma, Mike ; Tsai, Cheng-Tzung ; Yeh, Chung-Sing ; Chen, David

  • Author_Institution
    NTUEE, Taipei
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    For nanometer-regime PD SOI CMOS devices, the S/D region may be very small-the influence of the STI-induced mechanical stress cannot be neglected. In this paper, the influence of STI-induced mechanical stress in the subthrehsold kink behavior of a 40nm PD SOI NMOS device is reported.
  • Keywords
    CMOS integrated circuits; MOSFET; silicon-on-insulator; CMOS devices; PD SOI NMOS device; STI mechanical stress; silicon-on-insulator; size 40 nm; subthreshold kink effect; Doping; Educational institutions; Effective mass; MOS devices; Nanoscale devices; Photonic band gap; Stress; Testing; Thin film devices; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422325
  • Filename
    4422325
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2657981