Title :
STI Mechanical-stress induced subthreshold kink effect of 40nm PD SOI NMOS device
Author :
Lin, Ision ; Su, Vincen ; Kuo, James B. ; Ma, Mike ; Tsai, Cheng-Tzung ; Yeh, Chung-Sing ; Chen, David
Author_Institution :
NTUEE, Taipei
Abstract :
For nanometer-regime PD SOI CMOS devices, the S/D region may be very small-the influence of the STI-induced mechanical stress cannot be neglected. In this paper, the influence of STI-induced mechanical stress in the subthrehsold kink behavior of a 40nm PD SOI NMOS device is reported.
Keywords :
CMOS integrated circuits; MOSFET; silicon-on-insulator; CMOS devices; PD SOI NMOS device; STI mechanical stress; silicon-on-insulator; size 40 nm; subthreshold kink effect; Doping; Educational institutions; Effective mass; MOS devices; Nanoscale devices; Photonic band gap; Stress; Testing; Thin film devices; Transistors;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422325
