DocumentCode
2658010
Title
Dual-transistor oscillator circuit for BAW and SAW resonator excitation in wide motion resistance range
Author
Kosykh, A.V. ; Lepetaev, Alexander N. ; Zavjalov, Sergei A.
Author_Institution
Omsk State Tech. Univ., Omsk, Russia
fYear
2012
fDate
21-24 May 2012
Firstpage
1
Lastpage
4
Abstract
In this article the analysis of the two-transistor crystal oscillator under the Bagaev circuit (which are a variety of the circuit of Butler) is produced. The technology of modeling is stated, merits and demerits of the presented circuit of excitation are considered.
Keywords
bulk acoustic wave devices; surface acoustic wave oscillators; surface acoustic wave resonators; BAW resonator excitation; Bagaev circuit; SAW resonator excitation; bulk acoustic wave resonator excitation; dual-transistor oscillator circuit; surface acoustic wave resonator excitation; two-transistor crystal oscillator; wide motion resistance range; Crystals; Impedance; Integrated circuit modeling; Noise; Oscillators; Resistance; Resonant frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium (FCS), 2012 IEEE International
Conference_Location
Baltimore, MD
ISSN
1075-6787
Print_ISBN
978-1-4577-1821-2
Type
conf
DOI
10.1109/FCS.2012.6243628
Filename
6243628
Link To Document