Microleverage DETF Aluminum Nitride resonating accelerometer

Author

Vigevani, Gabriele ; Goericke, Fabian T. ; Pisano, Albert P. ; Izyumin, Igor I. ; Boser, Bernhard E.

Author_Institution

Dept. of Mech. Eng., Univ. of California at Berkeley, Berkeley, CA, USA

fYear

2012

fDate

21-24 May 2012

Firstpage

1

Lastpage

4

Abstract

In this work, we present a novel microleverage Double Ended Tuning Fork (DETF) resonant accelerometer made of thin film piezoelectric Aluminum Nitride (AlN). The development and characterization of this novel design is discussed through a Finite Element Analysis (FEA) and experimentally demonstrated. The entire accelerometer structure is made of 2 μm of highly c-axis oriented piezoelectric AlN with 100 nm platinum as top and bottom electrode. The preliminary characterization of the accelerometer was performed in a vacuum chamber at a pressure of 4 Torr and achieved a sensitivity of 18.1 Hz/g (i.e. 54 ppm/g) along the sensing axis and 0.1 Hz/g along the cross axis.

Keywords

III-V semiconductors; accelerometers; aluminium compounds; finite element analysis; micromechanical resonators; microsensors; piezoelectric thin films; piezoelectric transducers; wide band gap semiconductors; FEA; accelerometer structure; bottom electrode; c-axis oriented piezoelectric; finite element analysis; microleverage DETF aluminum nitride resonating accelerometer; microleverage double ended tuning fork resonant accelerometer; pressure 4 torr; size 100 nm; thin film piezoelectric aluminum nitride; top electrode; vacuum chamber; Acceleration; Accelerometers; Frequency measurement; Micromechanical devices; Resonant frequency; Sensitivity; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium (FCS), 2012 IEEE International

Conference_Location

Baltimore, MD

ISSN

1075-6787

Print_ISBN

978-1-4577-1821-2

Type

conf

DOI

10.1109/FCS.2012.6243634

Filename

6243634