Title :
Accuracy of Microwave Transistor
and
Extractions
Author :
Teppati, Valeria ; Tirelli, Stefano ; Lovblom, Rickard ; Fluckiger, Ralf ; Alexandrova, Maria ; Bolognesi, C.R.
Author_Institution :
Dept. of Inf. Technol. und Elektrotechnik, ETH Zurich, Zurich, Switzerland
Abstract :
We present a complete methodology to evaluate the accuracy of the microwave transistor figures-of-merit fT (current gain cutoff frequency) and fMAX (maximum oscillation frequency). These figures-of-merit are usually extracted from calibrated S-parameter measurements affected by residual calibration and measurement uncertainties. Thus, the uncertainties associated with fT and fMAX can be evaluated only after an accurate computation of the S-parameters uncertainties. This is done with the aid of two recently released software tools. In the uncertainty propagation, the standard de-embedding techniques are assumed to be error free, but still contribute to the final uncertainty budget via their measurement uncertainty. We also present an analysis of how different interpolation/extrapolation methodologies affect uncertainty. In addition, an overview of the possible causes of errors and suggestions on how to avoid them are given. With the continued rise of reported fT/fMAX values, this work has become necessary in order to evaluate the accuracy of these figures-of-merit both by adding confidence intervals to their values and by identifying possible extraction errors.
Keywords :
S-parameters; calibration; extrapolation; heterojunction bipolar transistors; interpolation; measurement uncertainty; microwave transistors; semiconductor device measurement; Microwave Transistor figures-of-merit; S-parameter measurements; confidence intervals; current gain cutoff frequency; interpolation-extrapolation methodologies; maximum oscillation frequency; measurement uncertainty; software tools; uncertainty propagation; DH-HEMTs; Frequency measurement; Measurement uncertainty; Scattering parameters; Uncertainty; Integrated circuit measurements; measurement uncertainty; millimeter wave devices; millimeter wave technology; millimeter wave transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2306573