Spatially resolving the degradation of SPC thin-film transistors under AC stress

In this work, a new test structure was employed in the analysis of hot-carrier degradation under AC operations. We find that the on-current degrades with reducing falling time and confirm that the damage region is located near the drain. The experiment shows such tester has a high sensitivity in detecting AC degradation and provides unambiguous evidence that the damageoccurs during transient stages. With these unique features, the proposed test structure represents a powerful tool in practical applications for studying the reliability of TFT devices.