• DocumentCode
    2658655
  • Title

    Dimensional dependences of the dynamic-NBTI with 1.2 nm N20-ISSG oxynitrides

  • Author

    Lai, Chao Sung ; Huang, D.C. ; Chung, S.S.

  • Author_Institution
    Chang Gung Univ., Kwei-Shan
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, we compare RTO, N2O-ISSG and RPNO ultrathin oxynitride gate dielectrics with equal physical oxide thickness of 12 A under negative bias temperature instability (NBTI) degradation and/or dynamic NBTI (DNBTI) reliability for ultra-thin SiON gate dielectrics in pMOSFET devices. It was found that the N2O-ISSG oxynitride gate dielectric film demonstrates good interface properties and excellent reliability. This is a very crucial issue for the present and future CMOS ULSI using ultra-thin SiON gate dielectrics in pMOSFET devices.
  • Keywords
    MOSFET; dielectric thin films; interface phenomena; N2O-ISSG; RPNO ultrathin oxynitride gate dielectrics; RTO; interface properties; negative bias temperature instability; pMOSFET devices; size 1.2 nm; Degradation; Dielectric devices; Dielectric films; Hydrogen; MOSFET circuits; Niobium compounds; Nitrogen; Semiconductor films; Stress; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422358
  • Filename
    4422358
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2658655