Title :
Impact of width effect on performance enhancement in NMOSFETs with silicon-carbon alloy stressor and stress CESL
Author :
Wang, Wei-Ching ; Kuang, Shin-Jiun ; Chang, Shu-Tong ; Huang, Jacky ; Huang, C.-F.
Author_Institution :
Nat. Chung Hsing Univ., Taichung
Abstract :
We simulated stress components in three directions in the Si channel of NMOSFETs with SiC alloy S/D stressor and tensile CESL in this study. The resulting saturation drain current enhancement was analyzed. Tensile stress along the transport direction was found to dominate mobility enhancement. Stress along the width direction was found to affect drain current the least. However, for NMOSFETs, the compressive stress along vertical direction perpendicular to the gate oxide the makes considerable contribution to mobility enhancement and can not be neglected. To obtain the new mobility model for this study, we extended a simple model for strain effect in Si band, to include both shear strain and the quantum confinement effect in the inversion layer of NMOSFETs.
Keywords :
MOSFET; compressive strength; silicon compounds; stress analysis; tensile strength; NMOSFET; SiC; compressive stress; inversion layer; mobility enhancement; performance enhancement; quantum confinement; saturation drain current enhancement; shear strain; silicon-carbon alloy stressor; size 0.2 mum to 5 mum; strain effect; stress CESL; tensile stress; Capacitive sensors; Compressive stress; Educational institutions; Effective mass; Equations; MOSFET circuits; Potential well; Silicon alloys; Silicon carbide; Tensile stress;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422364
