• DocumentCode
    2658760
  • Title

    Improvement of Charge Programming and Retention by NH3 Plasma Treatment on Tunnel Oxide for SiO2/SixGe1-x/SiO2 Tri-layer Memory Devices

  • Author

    Fan, Kung Ming ; Lai, Chao Sung ; Fang, Yu Ching ; Ai, Chi Fong ; Chen, C.R.

  • Author_Institution
    Chang Gung Univ., Taoyuan
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The aim of this paper is to study, the NH3 plasma technique to improve the charge programming speed and retention time for the SiO2/SixGe1-x/SiO2 tri-layer memory devices. The modulated tunnel oxide energy band gap near SixGe1-x/TO interface is suitable for enhancing the programming and charge retention performance.
  • Keywords
    energy gap; plasma materials processing; semiconductor storage; silicon compounds; NH3; NH3 plasma treatment technique; SiO2-SixGe1-x-SiO2; charge programming; charge retention performance; modulated tunnel oxide energy band gap; tri-layer memory devices; Annealing; Channel bank filters; Materials science and technology; Nanocrystals; Nonvolatile memory; Plasma devices; Plasma materials processing; Plasma properties; Plasma temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422365
  • Filename
    4422365
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2658760