DocumentCode :
2658766
Title :
Effect of Bi2O3 doping on the electrical characteristics of Al-doped ZnO varistors with low residual voltage
Author :
Long, Wangcheng ; He, Jinliang ; Hu, Jun ; Liu, Jun
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
fYear :
2010
fDate :
17-20 Oct. 2010
Firstpage :
1
Lastpage :
4
Abstract :
The effects of Bi2O3 doping on the electrical characteristics of Al-doped ZnO varistors were studied. The electrical characteristics and the microstructural parameters of the varistor samples with various content of Bi2O3 additive were investigated. With the amount of the doped Bi2O3 increased, the leakage currents of the Al-doped ZnO varistors are inhibited obviously. In addition, their breakdown electric fields decrease and their nonlinear coefficients increase accordingly. The XRD patterns show that the Bi-rich phase changes remarkably in the varistor samples as the delta-Bi2O3 are decreasing and the BiO2-x phase are increasing. The effects of Bi2O3 doping on the electrical characteristics of the Al-doped ZnO varistors are discussed based on the XRD patterns.
Keywords :
semiconductor doping; varistors; Bi2O3; XRD pattern; ZnO; breakdown electric field; doping; electrical characteristics; leakage current; low residual voltage; nonlinear coefficient; varistor; Current measurement; Doping; Leakage current; Varistors; X-ray scattering; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation and Dielectric Phenomena (CEIDP), 2010 Annual Report Conference on
Conference_Location :
West Lafayette, IN
ISSN :
0084-9162
Print_ISBN :
978-1-4244-9468-2
Type :
conf
DOI :
10.1109/CEIDP.2010.5723977
Filename :
5723977
Link To Document :
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