Title :
Enhancement of critical dimension of wet-etched thick insulator holes in triode CNT-FED devices
Author :
Wei, Hsiao-Fen ; Hsiue, Ging-Ho ; Liu, Chin-Yh ; Chen, Kuo-Feng ; Chen, Kuang-Chung
Author_Institution :
Nat. TsingHua Univ., Hsinchu
Abstract :
In this investigation, a triode structure CNT-FED is produced using screen printing and photolithography process. Wet-etching process was employed to fabricate the insulating holes. The dimensional uniformity of insulator holes was improved by changing the wet etching mechanism from vertical dip-etching to horizontal spray-etching.
Keywords :
carbon nanotubes; etching; field emission displays; photolithography; triodes; field emission display; horizontal spray-etching; photolithography process; screen printing; triode CNT-FED devices; vertical dip-etching; wet-etched thick insulator holes; Anodes; Current measurement; Educational institutions; Etching; Fabrication; Insulation; Pressure measurement; Spraying; Thick films; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422367