Title :
A new self-heating effects model for 4H-SiC MESFETs
Author :
Cao, Quanjun ; Zhang, Yimen ; Zhang, Yuming ; Guo, Hui
Author_Institution :
Xidian Univ., Xi´´an
Abstract :
In this paper, a CAD oriented self-heating effects model for 4H-SiC MESFETs is presented. We firstly give a brief derivative which combined a CAD-oriented quasi-analytical drain current model and the principle of self-heating effects for 4H-SiC MESFET, secondly present a relationship of the main parameters verses temperature for circuit oriented design, leading to a complete expression of self-heating effects model for 4H-SiC MESFETs. The validity of the present model and discussion are made last.
Keywords :
Schottky gate field effect transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC MESFET; CAD oriented self-heating effects model; SiC; circuit oriented design; quasi-analytical drain current model; Design automation; Educational institutions; Electron mobility; Integrated circuit modeling; MESFET integrated circuits; MMICs; Microwave devices; Power generation; Radio frequency; Silicon carbide;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422368
