• DocumentCode
    2658845
  • Title

    GaN MESFET growth on vicinal sapphire by MOVPE

  • Author

    Chang, Shoou-Jinn ; Huang, Chieh-Chih ; Lin, Jia-Ching ; Chang, Sheng-Po ; Cheng, Yi-Cheng ; Lin, Wen-Jen

  • Author_Institution
    Nat. Cheng Kung Univ., Tainan
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In conclusion, a high mobility and high carrier concentration GaN MESFET was presented in this study. We can get the higher mobility 416 cm2/v-s and higher carrier concentration 4x1017 cm-3 in the channel of the sample grown on 1 -off sapphire. We can observe the thin film quality of samples grown on 1 -off sapphire was better than samples grown on 0 -off sapphire.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium compounds; wide band gap semiconductors; MESFET growth; high carrier concentration; mobility carrier; thin film quality; vicinal sapphire; Educational institutions; Electrons; Epitaxial growth; Epitaxial layers; Gallium nitride; HEMTs; MESFETs; Semiconductor materials; Substrates; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422370
  • Filename
    4422370
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2658845