Title :
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation
Author :
Furno, Enrico ; Bertazzi, Francesco ; Goano, Michele ; Ghione, Giovanni ; Bellotti, Enrico
Author_Institution :
Politecnico di Torino, Torino
Abstract :
Zinc oxide (ZnO) has seen practical applications much earlier than most wide band gap semiconductors, but only recently it has received renewed attention for electronic and optoelectronic applications because of its potential advantages over III-nitrides, including commercial availability of bulk single crystals, amenability to wet chemical etching, a larger exciton binding energy, and excellent radiation-hard characteristics (Ozgur et al., 2005).
Keywords :
II-VI semiconductors; Monte Carlo methods; etching; hydrodynamics; wide band gap semiconductors; zinc compounds; Monte Carlo simulation; Wurtzite ZnO; ZnO; bulk single crystals; exciton binding energy; hydrodynamic transport parameters; radiation-hard characteristics; wet chemical etching; zinc oxide; Application software; Brillouin scattering; Chemical analysis; Distribution functions; Educational institutions; Electrons; Hydrodynamics; Monte Carlo methods; Temperature distribution; Zinc oxide;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422373
