Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation

Author

Furno, Enrico ; Bertazzi, Francesco ; Goano, Michele ; Ghione, Giovanni ; Bellotti, Enrico

Author_Institution

Politecnico di Torino, Torino

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

Zinc oxide (ZnO) has seen practical applications much earlier than most wide band gap semiconductors, but only recently it has received renewed attention for electronic and optoelectronic applications because of its potential advantages over III-nitrides, including commercial availability of bulk single crystals, amenability to wet chemical etching, a larger exciton binding energy, and excellent radiation-hard characteristics (Ozgur et al., 2005).

Keywords

II-VI semiconductors; Monte Carlo methods; etching; hydrodynamics; wide band gap semiconductors; zinc compounds; Monte Carlo simulation; Wurtzite ZnO; ZnO; bulk single crystals; exciton binding energy; hydrodynamic transport parameters; radiation-hard characteristics; wet chemical etching; zinc oxide; Application software; Brillouin scattering; Chemical analysis; Distribution functions; Educational institutions; Electrons; Hydrodynamics; Monte Carlo methods; Temperature distribution; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422373

Filename

4422373