DocumentCode :
2658929
Title :
The limiting frontiers of maximum DC voltage at the drain of SiC microwave power transistors in case of class-A power amplifier
Author :
Azam, Sher ; Jonnson, R. ; Wahab, Q.
Author_Institution :
Linkoping Univ., Linkoping
fYear :
2007
fDate :
12-14 Dec. 2007
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, we have studied the limiting frontiers of maximum DC voltage, which can be applied at the drain of SiC MESFET in case of class-A power amplifier. In this technique a DC bias and RF input signal to the gate while a DC bias and RF output signal simultaneously was applied to the drain terminal. The RF source at the drain delivered a sine wave at the fundamental frequency thereby acting as a short at the higher harmonic frequencies. These signals thus also acted as an active match to the transistor. The results from the time domain simulations were then transformed into frequency domain using FFT in MATLAB.
Keywords :
fast Fourier transforms; frequency-domain analysis; microwave power amplifiers; microwave power transistors; power MESFET; silicon compounds; time-domain analysis; DC bias; FFT; MATLAB; MESFET; RF signal; SiC; class-A power amplifier; frequency domain; harmonic frequency; microwave power transistors; time domain simulations; Frequency domain analysis; MESFETs; Microwave amplifiers; Power amplifiers; Power transistors; RF signals; Radio frequency; Radiofrequency amplifiers; Silicon carbide; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
Type :
conf
DOI :
10.1109/ISDRS.2007.4422375
Filename :
4422375
Link To Document :
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