Title :
New switching simulation models of power electronic parts as IGBT, MOSFET and power diode
Author :
Kovac, D. ; Kovacova, I.
Author_Institution :
Dept. of Theoret. Electrical Eng., Tech. Univ. Kosice, Slovakia
Abstract :
The paper describes some accuracy problems of computer simulation models of power MOSFETs, IGBTs and power diodes in the simulation program PSPICE. New switching models of these devices are presented
Keywords :
SPICE; bipolar transistor switches; digital simulation; field effect transistor switches; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power engineering computing; power field effect transistors; power semiconductor diodes; power semiconductor switches; semiconductor device models; software packages; IGBT; MOSFET; PSPICE; computer simulation; power diode; power electronics; switching simulation models; Diodes; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET;
Conference_Titel :
Industrial Electronics, Control and Instrumentation, 1994. IECON '94., 20th International Conference on
Conference_Location :
Bologna
Print_ISBN :
0-7803-1328-3
DOI :
10.1109/IECON.1994.397763
