DocumentCode
2658944
Title
New switching simulation models of power electronic parts as IGBT, MOSFET and power diode
Author
Kovac, D. ; Kovacova, I.
Author_Institution
Dept. of Theoret. Electrical Eng., Tech. Univ. Kosice, Slovakia
Volume
1
fYear
1994
fDate
5-9 Sep 1994
Firstpage
124
Abstract
The paper describes some accuracy problems of computer simulation models of power MOSFETs, IGBTs and power diodes in the simulation program PSPICE. New switching models of these devices are presented
Keywords
SPICE; bipolar transistor switches; digital simulation; field effect transistor switches; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power engineering computing; power field effect transistors; power semiconductor diodes; power semiconductor switches; semiconductor device models; software packages; IGBT; MOSFET; PSPICE; computer simulation; power diode; power electronics; switching simulation models; Diodes; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, Control and Instrumentation, 1994. IECON '94., 20th International Conference on
Conference_Location
Bologna
Print_ISBN
0-7803-1328-3
Type
conf
DOI
10.1109/IECON.1994.397763
Filename
397763
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