DocumentCode :
2658972
Title :
Analysis of an IGBT power module
Author :
Brambilla, Angelo ; Dallago, Enrico ; Romano, Raul
Author_Institution :
Dipartimento di Elettronica ed Inf., Politecnico di Milano, Italy
Volume :
1
fYear :
1994
fDate :
5-9 Sep 1994
Firstpage :
129
Abstract :
The simulation of IGBT turn-on and turn-off phases is an important aspect of power converter design. Since power IGBTs have fast turn-on and turn-off time capabilities compared with SCRs and GTOs, the stray inductances of the circuit cause voltage spikes that can damage these devices. An accurate circuit layout must be made in order to minimize the stray inductances and to ensure suitable and reliable power converter operation. Moreover, internal IGBT stray inductances and the dynamic saturation have a dominant role in determining switching behavior and they also deeply influence gate driver loop and the IGBT voltage clamp design. Here, the authors investigate these aspects and report some simulation and experimental results obtained using an industrial prototype
Keywords :
bipolar transistor switches; circuit testing; driver circuits; insulated gate bipolar transistors; network synthesis; overvoltage; power bipolar transistors; power convertors; power semiconductor switches; semiconductor device models; semiconductor device testing; switching circuits; IGBT power module; circuit design; dynamic saturation; experiments; gate driver loop; power converter; simulation; stray inductances; switching behavior; turn-off; turn-on; voltage clamp; voltage spikes; Capacitance; Circuit simulation; Clamps; Driver circuits; Inductance; Insulated gate bipolar transistors; Multichip modules; Prototypes; Switching converters; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics, Control and Instrumentation, 1994. IECON '94., 20th International Conference on
Conference_Location :
Bologna
Print_ISBN :
0-7803-1328-3
Type :
conf
DOI :
10.1109/IECON.1994.397764
Filename :
397764
Link To Document :
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