Title :
Epitaxial films of LGS, LGT, and LGN for SAW and BAW devices
Author :
Klemenz, Christine F. ; Malocha, Donald C.
Author_Institution :
Adv. Mater. Process. & Anal. Center, Central Florida Univ., Orlando, FL, USA
Abstract :
This paper presents the state of art in liquid phase epitaxial growth of high-quality LGS, LGT and LGN thin films. Langasites can be grown by Czochralski, but the defect structure and inhomogeneity of these crystals leads to several problems like non reproducibility in device parameters and fundamental properties measurements. Compared to any melt growth technique, oxide crystals grown from a solution, or single-crystalline films deposited on a substrate from a solution (e.g. by liquid phase epitaxy (LPE)) show a higher structural perfection, better homogeneity, and lower (native) defects density when substrate, solution, and growth parameters meet certain requirements. Also, the LPE film surface may develop into a facet e.g. in an extremely flat surface perfectly oriented in a given crystallographic plane that do not require further processing. X-, Y-, and Z-oriented LPE films of LGS, LGT and LGN could be homoepitaxially grown from a lead-oxide based high-temperature solution. Such films are of obvious interest for SAW devices, and further research may also lead to freestanding high-quality LPE films to be used as bulk resonators.
Keywords :
bulk acoustic wave devices; gallium compounds; lanthanum compounds; liquid phase epitaxial growth; piezoelectric thin films; surface acoustic wave devices; BAW device; LGN epitaxial film; LGS epitaxial film; LGT epitaxial film; LPE growth; La3Ga5.5NbO14; La3Ga5.5TaO14; La3Ga5SiO14; SAW device; crystallographic plane; defect structure; langanite thin film; langasite thin film; langatite thin film; liquid phase epitaxial growth; oxide crystal; single crystalline film; structural perfection; Art; Bulk acoustic wave devices; Crystallography; Crystals; Epitaxial growth; Face; Reproducibility of results; Substrates; Surface acoustic waves; Transistors;
Conference_Titel :
Frequency Control Symposium and PDA Exhibition Jointly with the 17th European Frequency and Time Forum, 2003. Proceedings of the 2003 IEEE International
Print_ISBN :
0-7803-7688-9
DOI :
10.1109/FREQ.2003.1275166