• DocumentCode
    2658990
  • Title

    Evolution of annealed undoped single crystal ZnO Surfaces and Implications for Schottky Barrier height

  • Author

    Pugel, D.E. ; Dhar, S. ; Hullavarad, S.S. ; Vispute, R.D. ; Varughese, B. ; Takeuchi, I. ; Venkatesan, T.

  • Author_Institution
    NASA GoddardSpace Flight Center, Greenbelt
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    In this article, the authors investigate the origin of the surface roughness of thermally-treated ZnO surfaces via atomic force microscopy, X-ray photoelectron spectroscopy (XPS), and Schottky barrier measurements.
  • Keywords
    II-VI semiconductors; Schottky barriers; X-ray photoelectron spectra; atomic force microscopy; surface roughness; zinc compounds; Schottky barrier height; Schottky barrier measurements; X-ray photoelectron spectroscopy; XPS; ZnO; atomic force microscopy; single crystal ZnO surfaces; surface roughness; thermally-treated ZnO surfaces; Annealing; Atomic force microscopy; Atomic measurements; Force measurement; Photoelectron microscopy; Rough surfaces; Schottky barriers; Surface roughness; Thermal force; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422379
  • Filename
    4422379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2658990