Title :
Iridium oxide films obtained by thermo-chemical transformation
Author :
Avila-García, A. ; Romero-Paredes, G. ; Peña-Sierra, R.
Author_Institution :
Dept. de Ing. Electr., CINVESTAV, Mexico City, Mexico
Abstract :
Films of iridium oxide were deposited by the dipping method from a 0.005M Iridium chloride solution in iso-propanol and post-annealed at different temperatures (350, 450 and 550 °C). After three dippings, very thin films, with effective thickness less than 10 nm were obtained. Their effective refractive index at 632.8 nm wavelength changed from 2.495 up to 2.727. X-ray diffraction measurements proved that composite films formed by an amorphous fraction, rutile IrO2 phase and metallic Ir particles were obtained. AFM images depict a textured surface, mainly for the highest annealing temperature. The Raman and FTIR spectra confirm the rutile phase of iridium oxide as an important component of the films. A possible path for the film formation is proposed.
Keywords :
Fourier transform spectra; Raman spectra; X-ray diffraction; annealing; atomic force microscopy; infrared spectra; iridium compounds; refractive index; thin films; FTIR spectra; IrO2; Raman spectra; X-ray diffraction; atomic force microscopy; dipping method; iridium oxide film; post annealing; refractive index; rutile phase; temperature 350 degC; temperature 450 degC; temperature 550 degC; thermochemical transformation; Annealing; Films; Glass; Silicon; Surface morphology; Temperature measurement; Dipping method; Iridium dioxide; Textured surface;
Conference_Titel :
Electrical Engineering Computing Science and Automatic Control (CCE), 2010 7th International Conference on
Conference_Location :
Tuxtla Gutierrez
Print_ISBN :
978-1-4244-7312-0
DOI :
10.1109/ICEEE.2010.5608590