Title :
Pseudo quantum dot behavior due to excitonic transitions in wide gap quantum wire lasers: InGaN-AlGaN and ZnCdSe-ZnMgSSe material systems
Author :
Huang, Wenli ; Jain, Faquir C.
Author_Institution :
US Mil. Acad., WestPoint
Abstract :
This paper presents simulations on InGaN-AlGaN and ZnCdSe-ZnMgSSe quantum wire lasers having excitonic transitions. We have found that the threshold current density (Jth) in a quantum wire laser is almost temperature independent when exciton binding energies are in the range of 30-50 meV. This behavior is like quantum dot lasers having free carrier transitions.
Keywords :
II-VI semiconductors; III-V semiconductors; aluminium compounds; cadmium compounds; current density; gallium compounds; indium compounds; magnesium compounds; optical materials; quantum well lasers; semiconductor device models; semiconductor quantum wires; wide band gap semiconductors; zinc compounds; InGaN-AlGaN; ZnCdSe-ZnMgSSe; exciton binding energy; excitonic transitions; free carrier transition; pseudo quantum dot behavior; quantum wire laser simulation; threshold current density; wide gap quantum wire lasers; Excitons; Laser theory; Laser transitions; Optical materials; Quantum computing; Quantum dot lasers; Quantum well lasers; Temperature; Threshold current; Wire;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422386
