Title :
Protection circuit of normally-on SiC JFET using an inrush current
Author :
Kim, Jong-Hyun ; Min, Byung-Duk ; Baek, Ju-Won ; Yoo, Dong-Wook
Author_Institution :
New & Renewable Energy Syst. Res. Center, Korea Electrotechnol. Res. Inst., Changwon, South Korea
Abstract :
A protection circuit for the normally-on SiC JFET is proposed in this paper. The protection circuit uses an inrush current that charges DC link capacitor in the initial time. Most of all, the normally-on SiC JFET can be protected using this current. But the inrush current is not generated under the special condition when the line voltage starts at zero magnitude of voltage. Another protection circuit is added to doubly protect SiC JFET under the condition. The experimental result shows that the proposed protection circuit has good performances.
Keywords :
capacitors; field effect integrated circuits; semiconductor materials; silicon compounds; wide band gap semiconductors; DC link capacitor charging; JFET; SiC; inrush current; protection circuit; JFET circuits; Silicon carbide; Surge protection;
Conference_Titel :
Telecommunications Energy Conference, 2009. INTELEC 2009. 31st International
Conference_Location :
Incheon
Print_ISBN :
978-1-4244-2490-0
Electronic_ISBN :
978-1-4244-2491-7
DOI :
10.1109/INTLEC.2009.5351894