Introducing high performance crystalfree™ pMEMS oscillators

Author

Bhugra, Harmeet ; Pan, Wanling ; Lei, Dino ; Lee, Seungbae

Author_Institution

Integrated Device Technol. Inc. (IDTI), San Jose, CA, USA

fYear

2012

fDate

21-24 May 2012

Firstpage

1

Lastpage

4

Abstract

High performance oscillators based on piezoelectrically transduced pMEMS™ resonators are introduced. pMEMS resonators consist of a piezoelectric material (AlN) on a single-crystal silicon layer substrate and typically have a quality factor of more than a few thousand and insertion loss close to -10dB. Plastic packaged pMEMS™ oscillators are immune to shock and vibration of 1500G and 20G, respectively, and have shown excellent long term frequency stability at 25°C, 125°C, -40C and hysteresis testing over -40°C to 125°C. Due to high quality factor and low motional impedance, oscillators based on pMEMS™ resonators can deliver low phase noise well below <;1.0ps for bandwidth from 12kHz to 20MHz.

Keywords

micromechanical resonators; oscillators; bandwidth 12 kHz to 20 MHz; high performance crystal-free pMEMS oscillators; insertion loss; piezoelectric material; piezoelectrically transduced pMEMS resonators; plastic packaged pMEMS oscillators; quality factor; single-crystal silicon layer substrate; temperature -40 degC to 125 degC; Electric shock; Performance evaluation; Phase noise; Resonant frequency; Silicon; Vibrations;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium (FCS), 2012 IEEE International

Conference_Location

Baltimore, MD

ISSN

1075-6787

Print_ISBN

978-1-4577-1821-2

Type

conf

DOI

10.1109/FCS.2012.6243685

Filename

6243685