Title :
Symbolic behavioral modeling of low voltage amplifiers
Author :
Tlelo-Cuautle, E. ; Martínez-Romero, E. ; Sánchez-López, C. ; Tan, Sheldon X D
Author_Institution :
Dept. of Electron., INAOE, Puebla, Mexico
Abstract :
We present the generation of symbolic expressions of low voltage amplifiers by using nullors equivalents of the transistors (MOSFETs) which include only the dominant parasitic elements in order to make a simplification before generation. That way, a reduced system of nodal equations is formulated which can be solved easily by determinant decision diagrams. The advantage of the proposed method is that the resulting symbolic behavioral model is reduced to a minimum order and contains just the dominant circuit elements providing a good insight, which is very useful for analog designers.
Keywords :
MOSFET circuits; amplifiers; equivalent circuits; MOSFET; dominant parasitic element; low voltage amplifiers; nullors equivalent; symbolic behavioral modeling; Admittance; Analog circuits; Capacitors; Computational modeling; Indexes; MOSFETs; Mathematical model;
Conference_Titel :
Electrical Engineering Computing Science and Automatic Control (CCE), 2010 7th International Conference on
Conference_Location :
Tuxtla Gutierrez
Print_ISBN :
978-1-4244-7312-0
DOI :
10.1109/ICEEE.2010.5608604