Amplification of space charge waves in n-InP films

Author

García-Barrientos, Abel ; Palankovski, Vassil

Author_Institution

Dept. of Mechatron., Polytech. Univ. of Pachuca (UPP), Hidalgo, Mexico

fYear

2010

fDate

8-10 Sept. 2010

Firstpage

613

Lastpage

616

Abstract

The non-linear interaction of space charge waves including the amplification in microwave and millimeter wave range in n-InP films, possessing the negative differential conductance phenomenon, is investigated theoretically. Both the amplified signal and the generation of harmonics of the input signal are demonstrated, which are due to non-linear effect of the negative differential resistance. It is possible to observe an amplification of the space charge waves in n-InP films of submicron thicknesses at essentially higher frequencies f <; 70 GHz, when compared with n-GaAs films f <; 44 GHz. The increment observed in the gain is due to the larger dynamic range in n-InP than in n-GaAs films.

Keywords

III-V semiconductors; high-frequency effects; indium compounds; negative resistance; semiconductor thin films; space charge; space-charge-limited conduction; InP; microwave amplification; millimeter wave amplification; negative differential conductance; nonlinear interaction; space charge waves; thin films; Electric fields; Electron mobility; Films; Indium phosphide; Mathematical model; Microwave amplifiers; Space charge; n-InP film; negative differential conductivity; space charge waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering Computing Science and Automatic Control (CCE), 2010 7th International Conference on

Conference_Location

Tuxtla Gutierrez

Print_ISBN

978-1-4244-7312-0

Type

conf

DOI

10.1109/ICEEE.2010.5608605

Filename

5608605