Title :
Impacts of precursor flow rate and temperature of PECVD-SiN capping films on strained-channel NMOSFETs
Author :
Lu, Ching-Sen ; Lin, Horng-Chih ; Lee, Yao-Jen ; Huang, Tiao-Yuan
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
In this paper, devices with SiN film deposited by higher N2 flow rate and deposition temperature possess higher tensile stress and thus better device performance enhancement. In addition, the immunity to hot-carrier stress is also improved because of less H diffusion from the SiN film.
Keywords :
MOSFET; hot carriers; plasma CVD; silicon compounds; PECVD-SiN capping films; SiN; SiN film; hot-carrier stress; precursor flow rate; strained-channel NMOSFET; tensile stress; Degradation; Educational institutions; Hot carriers; Hydrogen; Laboratories; MOSFETs; Performance gain; Silicon compounds; Temperature; Tensile stress;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422400
