• DocumentCode
    2659340
  • Title

    Impacts of precursor flow rate and temperature of PECVD-SiN capping films on strained-channel NMOSFETs

  • Author

    Lu, Ching-Sen ; Lin, Horng-Chih ; Lee, Yao-Jen ; Huang, Tiao-Yuan

  • Author_Institution
    Nat. Chiao Tung Univ., Hsinchu
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, devices with SiN film deposited by higher N2 flow rate and deposition temperature possess higher tensile stress and thus better device performance enhancement. In addition, the immunity to hot-carrier stress is also improved because of less H diffusion from the SiN film.
  • Keywords
    MOSFET; hot carriers; plasma CVD; silicon compounds; PECVD-SiN capping films; SiN; SiN film; hot-carrier stress; precursor flow rate; strained-channel NMOSFET; tensile stress; Degradation; Educational institutions; Hot carriers; Hydrogen; Laboratories; MOSFETs; Performance gain; Silicon compounds; Temperature; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422400
  • Filename
    4422400
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2659340