DocumentCode :
2659388
Title :
Core-shell germanium-silicon nanoparticle structure for high κ nonvolatile memory applications
Author :
Liu, Hai ; Winkenwerder, Wyatt ; Liu, Yueran ; Stanley, Scott K. ; Ekerdt, John G. ; Banerjee, Sanjay K.
Author_Institution :
Univ. of Texas at Austin, Austin
fYear :
2007
fDate :
12-14 Dec. 2007
Firstpage :
1
Lastpage :
2
Abstract :
This paper presents a new germanium-silicon core-shell nanoparticle structure for nonvolatile memory applications. This core-shell can help to passivate Ge dots from oxidation, create more favorable interface between nanoparticle and high K dielectric materials and improve device performance.
Keywords :
Ge-Si alloys; high-k dielectric thin films; nanoelectronics; nanoparticles; passivation; random-access storage; core-shell nanoparticle structure; dot passivation; high K dielectric materials; nonvolatile memory; Chemical vapor deposition; Educational institutions; Electron traps; Germanium silicon alloys; Hafnium oxide; Nanoscale devices; Nanostructures; Nonvolatile memory; Oxidation; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
Type :
conf
DOI :
10.1109/ISDRS.2007.4422403
Filename :
4422403
Link To Document :
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