Title :
Higher-mode free-free beam micromechanical resonators
Author :
Demirci, Mustafa U. ; Nguyen, Clark T -C
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Polysilicon free-free beam micromechanical resonators based on MEMS technology operating in second and third-mode flexural vibrations have been demonstrated at frequencies as high as 102 MHz with Q´s on the order of 11,500. Via strategic placement of electrodes, and careful determination of the exact support beam attachment locations that minimize anchor loss, these new resonators actually exhibit higher Q in the second mode than in the fundamental at the same frequency. Experiments to gauge the effect of variations in support beam dimensions and attachment locations on free-free beam microresonator performance show that an offset of only 0.6 μm in the support beam attachment location results in a 7X degradation in the Q. In addition, measured temperature coefficients for second-mode free-free beam μresonators are on the order of -13.1 ppm/°C, which is on par with that for fundamental mode resonance.
Keywords :
Q-factor; elemental semiconductors; micromechanical resonators; resonance; silicon; 0.6 micron; 107 MHz; MEMS technology; Si; anchor loss; free-free beam micromechanical resonator; fundamental mode resonance; polysilicon free free beam; second mode flexural vibration; strategic electrode placement; temperature coefficient; third mode flexural vibration; Degradation; Electrodes; Fabrication; Impedance; Microcavities; Micromechanical devices; Pollution measurement; Resonant frequency; Temperature measurement; Vibrations;
Conference_Titel :
Frequency Control Symposium and PDA Exhibition Jointly with the 17th European Frequency and Time Forum, 2003. Proceedings of the 2003 IEEE International
Print_ISBN :
0-7803-7688-9
DOI :
10.1109/FREQ.2003.1275195