Design and characterization of a gain-enhanced floating gate-body tied photodetector in Silicon on Sapphire CMOS

In this work, we report on the design, fabrication and testing of a photoreceptor in silicon on sapphire CMOS with an unprecedented responsivity of 250,000 A/W operating with a bias of only a few hundred millivolts at room temperature. The device consists of a floating gate-body tied MOS transistor with a low-threshold channel doping, but with a modified body structure that amplifies the gain of the device by as much as a factor often.