DocumentCode
2659507
Title
Mismatch compensation in current mirrors with FGMOS transistor
Author
de la Cruz Alejo, JesÙs ; Moreno, L. Noe Oliva
Author_Institution
Div. de Maestria en Ing. Mecatronica, TESE, Mexico City, Mexico
fYear
2010
fDate
8-10 Sept. 2010
Firstpage
599
Lastpage
603
Abstract
This paper presents a technique to solve mismatch compensation problems in current mirrors using the floating gate MOS transistor. To reduce mismatches, the tunneling and injection processes are applied in a 1.2 μm CMOS process. It takes into account the long-term voltage storage as charge on the floating gate of a transistor pMOS. Experimental results justifying these processes are also including. The output current of the current mirror present successful results according to theorical analysis and achieving the mismatch compensation.
Keywords
CMOS integrated circuits; MOSFET; current mirrors; CMOS process; current mirrors; floating gate MOS transistor; injection process; mismatch compensation; size 1.2 mum; tunneling process; voltage storage; Capacitance; Logic gates; MOSFETs; Mirrors; Nonvolatile memory; Tunneling; Current; floating-gate; injection; mirror; mismatch; tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering Computing Science and Automatic Control (CCE), 2010 7th International Conference on
Conference_Location
Tuxtla Gutierrez
Print_ISBN
978-1-4244-7312-0
Type
conf
DOI
10.1109/ICEEE.2010.5608617
Filename
5608617
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