• DocumentCode
    2659507
  • Title

    Mismatch compensation in current mirrors with FGMOS transistor

  • Author

    de la Cruz Alejo, JesÙs ; Moreno, L. Noe Oliva

  • Author_Institution
    Div. de Maestria en Ing. Mecatronica, TESE, Mexico City, Mexico
  • fYear
    2010
  • fDate
    8-10 Sept. 2010
  • Firstpage
    599
  • Lastpage
    603
  • Abstract
    This paper presents a technique to solve mismatch compensation problems in current mirrors using the floating gate MOS transistor. To reduce mismatches, the tunneling and injection processes are applied in a 1.2 μm CMOS process. It takes into account the long-term voltage storage as charge on the floating gate of a transistor pMOS. Experimental results justifying these processes are also including. The output current of the current mirror present successful results according to theorical analysis and achieving the mismatch compensation.
  • Keywords
    CMOS integrated circuits; MOSFET; current mirrors; CMOS process; current mirrors; floating gate MOS transistor; injection process; mismatch compensation; size 1.2 mum; tunneling process; voltage storage; Capacitance; Logic gates; MOSFETs; Mirrors; Nonvolatile memory; Tunneling; Current; floating-gate; injection; mirror; mismatch; tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering Computing Science and Automatic Control (CCE), 2010 7th International Conference on
  • Conference_Location
    Tuxtla Gutierrez
  • Print_ISBN
    978-1-4244-7312-0
  • Type

    conf

  • DOI
    10.1109/ICEEE.2010.5608617
  • Filename
    5608617