Title :
A New Microwave Amplitude Limiter Using GaAs Field Effect Transistor
Author :
Fukuda, S. ; Kitamura, M. ; Ara, Y. ; Haga, I.
Abstract :
This paper describes a new microwave amplitude limiter with low AM-to-PM conversion using a class A GaAs FET amplifier. It has been experimentally established that this limiter is applicable for use with 200 Mbits/sec 4-phase PSK signals or 2700-channel FDM-FM signals.
Keywords :
Bipolar transistors; Dynamic range; Gallium arsenide; Microwave FETs; Microwave amplifiers; Phase shift keying; Power amplifiers; Power generation; Satellite communication; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1977 IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/MWSYM.1977.1124418
