Title :
Overview of 1.2kV – 2.2kV SiC MOSFETs targeted for industrial power conversion applications
Author :
Bolotnikov, Alexander ; Losee, Peter ; Permuy, Alfred ; Dunne, Greg ; Kennerly, Stacey ; Rowden, Brian ; Nasadoski, Jeffrey ; Harfman-Todorovic, Maja ; Raju, Ravisekhar ; Fengfeng Tao ; Cioffi, Philip ; Mueller, Frank J. ; Stevanovic, Ljubisa
Author_Institution :
Gen. Electr. Global Res. Center, Niskayuna, NY, USA
Abstract :
This paper presents the latest 1.2kV-2.2kV SiC MOSFETs designed to maximize SiC device benefits for high-power, medium voltage power conversion applications. 1.2kV, 1.7kV and 2.2kV devices with die size of 4.5mm × 4.5mm were fabricated, exhibiting room temperature on-resistances of 34mOhm, 39mOhm and 41mOhm, respectively. The ability to safely withstand single-pulse avalanche energies of over 17J/cm2 is demonstrated. Next, the 1.7kV SiC MOSFETs were used to fabricate half-bridge power modules. The module typical onresistance was 7mOhm at Tj=25°C and 11mOhm at 150°C. The module exhibits 9mJ turn-on and 14mJ turn-off losses at Vds=900V, Id=400A. Validation of GE´s SiC MOSFET performance advantages was done through continuous buck-boost operation with three 1.7kV modules per phase leg exhibiting 99.4% efficiency. Device ruggedness and tolerance to terrestrial cosmic radiation was evaluated. Experimental results show that higher voltage devices (2.2kV and 3.3kV) are more susceptible to cosmic radiation, requiring up to 45% derating in order to achieve module failure rate of 100 FIT, while 1.2kV MOSFETs require only 25% derating to deliver similar FIT rate. Finally, the feasibility of medium voltage power conversion based on series connected 1.2kV SiC MOSFETs with body diode is demonstrated.
Keywords :
avalanche diodes; bridge circuits; elemental semiconductors; power MOSFET; power conversion; power convertors; continuous buck-boost operation; current 400 A; device ruggedness; device tolerance; half-bridge power modules; high-power power conversion applications; industrial power conversion applications; medium voltage power conversion applications; module failure rate; silicon carbide MOSFET; single-pulse avalanche energies; terrestrial cosmic radiation; voltage 1.2 kV to 2.2 kV; voltage 1.7 kV; voltage 900 V; Immune system; MOSFET; Performance evaluation; Schottky diodes; Silicon; Silicon carbide; Switches; MOSFET; SiC; body diode; medium voltage power converter; module; power device; radiation hardness; series connected;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location :
Charlotte, NC
DOI :
10.1109/APEC.2015.7104691