Demonstration of 10 kV, 50A 4H-SiC DMOSFET with stable subthreshold characteristics across 25–200 °C operating temperatures

Author

Howell, Robert S. ; Buchoff, Steven ; Van Campen, Stephen ; McNutt, Ty ; Nechay, Bettina ; Sherwin, Marc ; Singh, Ranbir

Author_Institution

Northrop Grumman Electron. Syst., Linthicum Heights

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

This paper has described the fabrication and demonstration of 10 kV SiC MOSFETs, with active areas of 0.15 cm² and 0.61 cm², capable of operating at 5-10 A and 20-50 A respectively, and demonstrating excellent, stable subthreshold characteristics as a function of operating temperature (<200 degC ). These large area SiC DMOSFETs and their promising characteristics are excellent candidates to realize high voltage high speed solid state switching applications.

Keywords

field effect transistor switches; power semiconductor switches; silicon compounds; 4H-SiC DMOSET; SiC; current 50 A; solid state switching applications; stable subthreshold characteristics; temperature 25 degC to 200 degC; voltage 10 kV; Breakdown voltage; Educational institutions; Electric breakdown; Intrusion detection; MOSFETs; Silicon carbide; Solid state circuits; Temperature dependence; Temperature distribution; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422414

Filename

4422414