Exploring the design space of rugged seven lithographic level silicon carbide vertical JFETs for the development of 1200-V, 50-A devices

Silicon carbide (SiC) is ideally suited for power conditioning applications due to its high saturated drift velocity, its mechanical strength, its excellent thermal conductivity, and its high critical field strength. For power devices, the tenfold increase in critical field strength of SiC allows high voltage blocking layers to be fabricated significantly thinner than those of comparable Si devices. This reduces device on-state resistance and the associated conduction and switching losses, while maintaining the same high voltage blocking capability.