• DocumentCode
    2659603
  • Title

    Demonstration of the first power IC on 4H-SiC

  • Author

    Zhao, J.H. ; Zhang, Y. ; Su, M. ; Sheng, K. ; Alexandrov, P. ; Fursin, L.

  • Author_Institution
    Rutgers Univ., Piscataway
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Development of the first PIC on SiC has been reported. Such a technology can provide ultra-compact and efficient system for high temperature and high frequency applications.
  • Keywords
    high-temperature electronics; power integrated circuits; silicon compounds; wide band gap semiconductors; SiC; high frequency applications; high temperature applications; power IC; ultra compact system; Conducting materials; Driver circuits; Educational institutions; Electron devices; Fabrication; Material properties; Photonic band gap; Power integrated circuits; Silicon carbide; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422416
  • Filename
    4422416
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2659603