Title :
Demonstration of the first power IC on 4H-SiC
Author :
Zhao, J.H. ; Zhang, Y. ; Su, M. ; Sheng, K. ; Alexandrov, P. ; Fursin, L.
Author_Institution :
Rutgers Univ., Piscataway
Abstract :
Development of the first PIC on SiC has been reported. Such a technology can provide ultra-compact and efficient system for high temperature and high frequency applications.
Keywords :
high-temperature electronics; power integrated circuits; silicon compounds; wide band gap semiconductors; SiC; high frequency applications; high temperature applications; power IC; ultra compact system; Conducting materials; Driver circuits; Educational institutions; Electron devices; Fabrication; Material properties; Photonic band gap; Power integrated circuits; Silicon carbide; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422416
