Title :
25W 915nm Lasers with Window Structure Fabricated by Impurity Free Vacancy Disordering (IFVD)
Author :
Taniguchi, H. ; Ishii, H. ; Minato, R. ; Nakasaki, R. ; Ohki, Y. ; Namegaya, T. ; Kasukawa, A.
Author_Institution :
Photonic Device Res. center, Furukawa Electr. Co. Ltd., Chiba
Abstract :
We have demonstrated high performance broad area single emitter lasers with window structure fabricated by newly developed IFVD technique. A very high output power of 25 W was obtained in 100mum wide lasers without facet degradation
Keywords :
laser beams; optical fabrication; semiconductor lasers; 100 micron; 25 W; 915 nm; IFVD window structure fabrication; broad area single emitter laser; impurity free vacancy disordering technique; Degradation; Impurities; Optical films; Optical losses; Power generation; Power lasers; Pulse measurements; Pulsed laser deposition; Semiconductor lasers; Temperature;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708072
