Fabrication and testing of 3500V/15A SiC JFET based power module for high-voltage, high-frequency applications

This paper introduces a 3500V, 15A SiC power module based on self-fabricated SiC junction field effect transistors (JFETs) and schottky barrier diodes (SBDs). The module consists of four parallel connected SiC JFETs as the switching device and four SBDs as the anti-parallel diode. Both static and dynamic performances are evaluated with this module. And a kW level boost converter is also constructed to further explore its switching capabilities. With carefully designed driver circuit, the module shows superiority of a high working frequency of 100kHz with both turn-on and turn-off time less than 150ns. Circuit efficiency at different working conditions are also evaluated in this work. This is the first demonstration of high voltage (>3.3kV) SiC JFET based power module and its circuit applications in high frequency and kW-level power converter.