Title :
Fabrication and testing of 3500V/15A SiC JFET based power module for high-voltage, high-frequency applications
Author :
Sizhe Chen ; Junwei He ; Hengyu Wang ; Kuang Sheng
Author_Institution :
Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
This paper introduces a 3500V, 15A SiC power module based on self-fabricated SiC junction field effect transistors (JFETs) and schottky barrier diodes (SBDs). The module consists of four parallel connected SiC JFETs as the switching device and four SBDs as the anti-parallel diode. Both static and dynamic performances are evaluated with this module. And a kW level boost converter is also constructed to further explore its switching capabilities. With carefully designed driver circuit, the module shows superiority of a high working frequency of 100kHz with both turn-on and turn-off time less than 150ns. Circuit efficiency at different working conditions are also evaluated in this work. This is the first demonstration of high voltage (>3.3kV) SiC JFET based power module and its circuit applications in high frequency and kW-level power converter.
Keywords :
Schottky barriers; Schottky diodes; driver circuits; elemental semiconductors; junction gate field effect transistors; power convertors; Schottky barrier diodes; anti parallel diode; circuit efficiency; current 15 A; driver circuit; high-frequency application; high-voltage application; kilo watt level boost converter; kilo watt-level power converter; parallel connected silicon carbide JFET; self-fabricated silicon carbide junction field effect transistors; silicon carbide JFET based power module; switching device; voltage 3500 V; Fabrication; JFETs; Logic gates; Multichip modules; Schottky diodes; Silicon carbide; Switches; SiC JFET; all-SiC module; boost converter;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location :
Charlotte, NC
DOI :
10.1109/APEC.2015.7104699
