DocumentCode
2659636
Title
9 W Output Power from a 808 nm Tapered Diode Laser in Pulse Mode Operation with Nearly Diffraction-Limited Beam Quality
Author
Dittmar, F. ; Klehr, A. ; Sumpf, B. ; Knauer, A. ; Fricke, J. ; Erbert, G. ; Trankle, Gunther
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
fYear
2006
fDate
2006
Firstpage
35
Lastpage
36
Abstract
High-power 808 nm tapered diode lasers are fabricated based on a SLOC structure with very small divergence of 18deg. 14 W overall output power with 9 W of nearly diffraction-limited beam quality are presented
Keywords
laser beams; laser cavity resonators; optical fabrication; semiconductor lasers; 14 W; 808 nm; SLOC structure; diffraction-limited beam quality; super-large optical-cavity structure; tapered diode laser fabrication; Diffraction; Diode lasers; Laser beams; Laser excitation; Laser modes; Lasers and electrooptics; Optical pulses; Power generation; Power lasers; Pump lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708073
Filename
1708073
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