Title :
X-Band--GaAs FET YIG-tuned Oscillator
Abstract :
The results of an X-band GaAs FET YIG-tuned osciIIator development are reported. The best performance achieved was a minimum output power of 35 mW over the frequency range of 8.0 to 12.4 GHz with oscillations from 7.15 to 13.8 GHz.
Keywords :
Bonding; Frequency; Gallium arsenide; Gold; Magnetic circuits; Microwave FETs; Oscillators; Power generation; Substrates; Thin film circuits;
Conference_Titel :
Microwave Symposium Digest, 1977 IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/MWSYM.1977.1124429
